Samsung Galaxy Note 7 Listed on Company Site; Galaxy S8 Tipped to Sport Dual Camera Setup

• The listed SM-N930F handset may be the Galaxy Note 7.
• The Galaxy Note 7 is expected to launch on August 2.
• The Galaxy S8 is tipped to sport a dual camera setup.

Samsung is expected to launch the Galaxy Note 7 earlier than tradition, and is expected to host anUnpacked event on August 2. Now, a fresh leak hints that the company’s website is already in the works of hosting an additional page listing the Galaxy Note 7. Furthermore, there is also a separate leak revealing some interesting details of the Galaxy S8 scheduled for release next year.

Starting with the Galaxy Note 7, the South Korean company’s official website now hosts (via GSMArena) a user agent profile page for the model number SM-N930F. Unfortunately, the profile page doesn’t reveal any details apart from the model number. Presumably the SM-N930F is the Galaxy Note 7, as the Galaxy Note 5 was SM-N920, and the Note 4 was the SM-N910 previously.

Samsung is said to have skipped a numeral, and ditched the 6 to be in sync with its flagship – Galaxy S series. The phablet has been leaked on various occasions, and it is said to come with an iris scanner. This will enable users to unlock the smartphone just by looking at it. The Samsung Galaxy Note 7 isrumoured to pack a 5.8-inch QHD display; a Snapdragon 820 or Snapdragon 823 processor; 6GB of RAM; 32GB of inbuilt storage; expandable storage via microSD card, a 12-megapixel rear camera, and a Dual Pixel setup in the front. Samsung is also expected to ship the Galaxy Note 7 with a USB Type-C port. The mass production of the phablet is said to begin on July 5.

In a separate leak (via Wccftech), Samsung’s next year flagship smartphone Galaxy S8 may just sport the dual camera setup that is aggressively rumoured on the iPhone 7 Plus this year. The camera will be built by Samsung Motors (Semco) itself. It is also expected to feature a 4K (2160×3840 pixels) display, and may be powered by a Snapdragon 830 SoC. The chip is pegged to be produced using a 10nm FinFET process for more power and energy efficiency.